The MOCVD Process, Run by Run

The step in the company's published chain

In the chain the company publishes, this is the growth step: its own GaN MOCVD equipment, epitaxial growth on sapphire, chip fabrication and packaging. The company's own line has run the step since 2010, when it built its UV LED production line on its own equipment and produced 280 nm deep UV LEDs. What the step involves for a new configuration — the chamber, the loading and the surrounding systems it will carry — is established per project in the configuration exchange, against the buyer's stated inputs.

What a new configuration will run

What recipe a new reactor configuration will run for a buyer's layer programme, and what it will grow, is established per project in the configuration exchange.

What a configuration enquiry states

• Wafer format and loading: the wafer size, and the number of wafers per run the programme targets.
• Layer programme: the layer stack the buyer's devices are built from, stated in the enquiry.
• Throughput: the run rate the system must sustain, with the runs-per-day duty.
• Facility conditions: the conditions at the installation site — gases, exhaust, cooling and cleanroom class.

Which elements a given project covers — installation support and commissioning among them — is defined per project in the quotation, so the scope boundary is explicit before any commitment.

Related equipment pages

Related pages: GaN MOCVD programme · equipment · reactor · epitaxy · what is MOCVD.

Are the process details on this page the company's production recipe?

No. This page describes the MOCVD process as the industry practises it — the sequence and the variables are process knowledge, common to GaN epitaxy. A specific production recipe is a programme's own process record; what a new reactor configuration will grow for a buyer's layer programme is established per project, in the configuration exchange.

The process in this company's record

The company's published history dates the programme behind this process: founded in 2001 to develop GaN MOCVD equipment, first system completed in 2002, a 3-wafer generation in 2005 and a 6-wafer generation in 2007 — the last recorded as a national 863 programme project. In 2010 the company built its UV LED production line on its own equipment and produced 280 nm deep UV LEDs; application products were commercialised by 2012. What a new configuration will grow for a buyer's layer programme is established per project, in the configuration exchange.

Stating the brief in the first message

A first message for this step carries the wafer format and loading, the layer programme, the throughput and the facility conditions together, and names the starting point plainly — a new installation, or added capacity alongside an existing line. It asks which elements the configuration covers for those inputs, and asks for the scope boundary to be stated in the quotation. Where drawings or site specifications exist, they belong in the same message, with the quantities and programme timing the installation is planned against.

The same exchange is where the two kinds of purchase are kept separate: components are confirmed per model — chips and packages from the published chain, modules from the module programme the catalogue lists alongside it — while epitaxy capacity is an equipment conversation, specified per project. An enquiry can also state the runs-per-day duty and the service access the installation's maintenance pattern requires, so the configuration is specified for the site's real operating pattern rather than a nominal one.